- 您现在的位置：买卖IC网 > Sheet目录126 > CDBFR0140R (Comchip Technology)DIODE SCHOTTKY 100MA 40V 1005
       CDBFR0140R Page 1 QW-A1061 REV:A +125 O C TSTG Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 0mA VF V 0.45 Reverse current Capacitance between terminals VR = 1 0V f = 1 MHz, and 10 VDC reverse voltage IR CT uA pF 6 1 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 n Typ Max Unit IO VR VRRM Average forward rectified current Reverse voltage Repetitive Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions V V mA 100 40 45 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 1 A Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F s tandard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.006 gram(approx.). 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. SMD Schottky Barrier Diode 1005/SOD-323F Io = 1 00 mA VR = 4 0 Volts RoHS Device |